Efficient, air-stable quantum dots light-emitting devices with MoO3 modifying the anode

被引:10
|
作者
Meng, Xiangdong [1 ,2 ]
Ji, Wenyu [2 ]
Hua, Jie [1 ]
Yu, Zhaoliang [1 ]
Zhang, Yan [1 ]
Li, Haibo [1 ]
Zhao, Jialong [2 ]
机构
[1] Jilin Normal Univ, Minist Educ, Key Lab Funct Mat Phys & Chem, Siping 136000, Peoples R China
[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
基金
中国国家自然科学基金;
关键词
Quantum dots; Light emitting devices; Energy transfer; Charge injection; DIODES; NANOCRYSTALS; BRIGHT;
D O I
10.1016/j.jlumin.2013.05.052
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this work, we fabricated quantum dots light-emitting devices with hole-injection layer, molybdenum oxide (MoO3) substituting for poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) which is hygroscopic and acidic and, therefore, a source of interface instability. A significant enhancement in luminance and current efficiency in MoO3-containing devices was observed. In addition, MoO3-containing devices were more stable in the air than those with PEDOT:PSS as the hole injection layer. The hole injection and transport of the devices were studied by the J-V characteristics of the hole-only devices. The excellent performance of the devices was principally a result of MoO3 possessing lower injection barrier for the hole and better stability than PEDOT:PSS. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:442 / 446
页数:5
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