Microstructure and Impedance Analysis of CaBi4Ti4O15 Piezoceramics with (LiCe)-Modifications

被引:0
|
作者
Peng, Zhihang [1 ]
Huang, Fengkang [1 ]
Chen, Qiang [1 ]
Bao, Shaoming [1 ]
Wang, Xiaoxiao [1 ]
Xiao, Dinquan [1 ]
Zhu, Jianguo [1 ]
机构
[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Sichuan, Peoples R China
关键词
component; Aurivillius type materials; CaBi4Ti4O15; piezoelectric ceramics; impedance; BISMUTH TITANATE; TEMPERATURE; SPECTROSCOPY;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
(Li,Ce) doped CaBi4Ti4O15 (CBT) ceramics were prepared using the conventional solid state method. The crystal structure and microstructure of CBT-based ceramics were determined by the X-ray diffraction and scanning electron microscopy. It was found that the (Li, Ce) ions diffused into the A site of pseudo-perovskite structure and formed single Aurivillius type structure. The Curie-temperature (T-C) of CBT ceramics decreased whereas the piezoelectric coefficient (d(33)) was improved with the increasing of (Li,Ce) dopants. Furthermore, the impedance spectrum techniques were invoked to understand the electrical properties for pure or modified-CBT compounds at high temperature region and the underlying physical mechanism were also discussed.
引用
收藏
页数:4
相关论文
共 50 条
  • [21] Ferroelectric and piezoelectric properties of tungsten doped CaBi4Ti4O15 ceramics
    Zeng, Jiangtao
    Wang, Ying
    Li, Yongxiang
    Yang, Qunbao
    Yin, Qingrui
    JOURNAL OF ELECTROCERAMICS, 2008, 21 (1-4) : 305 - 308
  • [22] Microstructure and electrical properties of Nb and Mn co-doped CaBi4Ti4O15 high temperature piezoceramics obtained by two-step sintering
    Shen, Zong-Yang
    Luo, Wen-Qin
    Tang, Yanxue
    Zhang, Shujun
    Li, Yueming
    CERAMICS INTERNATIONAL, 2016, 42 (06) : 7868 - 7872
  • [23] Co-precipitation method for the preparation of ferroelectric CaBi4Ti4O15
    Gaikwad, SP
    Dhage, SR
    Ravi, V
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2005, 16 (04) : 229 - 231
  • [24] A New SrBi4Ti4O15/CaBi4Ti4O15 Thin Film Capacitor for Excellent Electric Stability
    Nomura, Shuhei
    Yamashita, Kaoru
    Noda, Minoru
    Uchida, Hiroshi
    Funakubo, Hiroshi
    2011 INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS (ISAF/PFM) AND 2011 INTERNATIONAL SYMPOSIUM ON PIEZORESPONSE FORCE MICROSCOPY AND NANOSCALE PHENOMENA IN POLAR MATERIALS, 2011,
  • [25] Effects of La doping on ferroelectric properties of CaBi4Ti4O15 thin films
    Ding, Yanxia
    Hu, Guangda
    Fan, Suhua
    SURFACE REVIEW AND LETTERS, 2007, 14 (02) : 277 - 281
  • [26] Effect of different sintering temperatures on the electrical properties of the CaBi4Ti4O15 ceramics
    College of Material Science and Engineering, Shandong Jianzhu University, Jinan 250101, China
    不详
    Rengong Jingti Xuebao, 2007, 2 (396-399+380):
  • [27] 组分影响CaBi4Ti4O15介电性能的研究
    郑夏莲
    黄新友
    高春华
    硅酸盐通报, 2006, (01) : 105 - 108
  • [28] Effect of Mn Doping on the Dielectric and Electrical Conductivity of CaBi4Ti4O15 Ceramics
    Tanwar, Amit
    Gupta, Vinay
    Sreenivas, K.
    FERROELECTRICS, 2010, 404 : 19 - 26
  • [29] Bipolar resistive switching behaviours of perovskite CaBi4Ti4O15 thin films
    Lin, J. Y.
    Wu, C. L.
    MATERIALS RESEARCH INNOVATIONS, 2015, 19 : S407 - S409
  • [30] Dielectric Property of Silicate-Doped CaBi4Ti4O15 Thin Films
    Ogawa, Shota
    Kondoh, Yohta
    Kimura, Junichi
    Funakubo, Hiroshi
    Uchida, Hiroshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (09)