Organic field effect transistor mobility from transient response analysis

An electronic method for analyzing the transient response of a pentacene organic field effect transistor at time scales below 100 ns is presented with analysis that allows extraction of estimated field-dependent device mobility from the measured carrier velocity. A second technique we propose is the use of T-SPICE simulations of transient response data of the device behavior between similar to 100 ns and similar to 3 mu s. These results are compared with lower field-effect mobilities extracted from the transient data at 250 mu s and the dc drain current (I-d) versus source-drain voltage (V-ds) characteristics in the saturation regime. This trend of decreasing mobility with increasing time is perhaps due to the absence of the bias stress effect at small time scales.