Investigation of interface in silicon-on-insulator by fractal analysis

被引：5
|
作者：
Liu, XH [1 ]
Chen, J [1 ]
Chen, M [1 ]
Wang, X [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2002年 / 187卷 / 3-4期
基金：
中国国家自然科学基金;
关键词：
interface roughness; SIMOX; SOI; fractal;
D O I：
10.1016/S0169-4332(01)00827-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study, RMS roughness values of the interface between top silicon and buried layer in SIMOX-SOI SIMOX, separation by implantation of oxygen; SOL silicon-on-insulator were directly measured by AFM. The results revealed that they were self-affine fractal, Based on the variation of the RMS values with scan sizes, the fractal dimensions and horizontal cutoffs of the fractal interfaces were calculated. It was found that the cutoff values varied with the different processes suggesting that the cutoff is sensitive to process and can be used to characterize the quality of SIMOX-SOI wafer. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：187 / 191
页数：5
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