Chemical vapor deposition synthesis of self-aligned carbon nanotube arrays

被引:17
|
作者
Turano, SP [1 ]
Ready, J [1 ]
机构
[1] Georgia Tech Res Inst, Atlanta, GA 30332 USA
关键词
carbon nanotubes; chemical vapor deposition; aligned carbon nanotubes; nanotube towers; silicon substrates;
D O I
10.1007/BF02692434
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A procedure for producing arrays of self-aligned carbon nanotubes (CNTs) using standard chemical vapor deposition (CVD) is reported. Using UV photolithography, silicon substrates are patterned with a thin layer of thermally evaporated iron as a CNT catalyst. The CVD synthesis was carried out over a small temperature range (700 degrees C-800 degrees C) using acetylene and methane gasses, producing aligned CNT towers. Scanning electron microscopy (SEM) analysis shows a relationship between CNT tower height and synthesis time. Additionally, results show that impurity particles dramatically effect CNT tower growth. These results indicate that aligned CNTs can be produced in a desired pattern with height control.
引用
收藏
页码:192 / 194
页数:3
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