Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations

被引：0
|
作者：
Hauf, Moritz [1 ]
Schmidt, Gerhard [2 ]
Niedernostheide, Franz-Josef [1 ]
Johnsson, Anna [3 ]
Pichler, Peter [3 ,4 ]
机构：
[1] Infineon Technol AG, Munich, Germany
[2] Infineon Technol Austria AG, Villach, Austria
[3] Fraunhofer Inst Integrated Syst & Device Technol, Erlangen, Germany
[4] Univ Erlangen Nurnberg, Chair Electron Devices, Erlangen, Germany
来源：
2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018) | 2018年
关键词：
platinum implantation; silicon; diffusion; process simulation; device simulation; DIFFUSION; MECHANISM;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Based on experimental findings of platinum clusters, a model of post-implantation annealing of platinum in silicon has been developed for the temperature range from 850 to 900 degrees C and the dose range from 1x10(12) to 1x10(13) cm(-2). The model has been implemented in a full TCAD simulation chain to predict the electrical behaviour of platinum-diffused diodes.
引用
收藏
页码：267 / 270
页数：4
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