Conduction properties and scattering mechanisms in F-doped textured transparent conducting SnO2 films deposited by APCVD

Transparent conducting F-doped texture SnO2 films with resistivity as low as 5x10(-4) Omega . cm, with carrier concentrations between 3.5x10(20) and 7x10(20) cm(-3) and Hall mobilities from 15.7 to 20.1 cm(2)/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier concentration for the resulting films have been obtained. The temperature dependence of the mobility and carrier concentration have been measured over a temperature range 16 similar to 400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2:F films in the tow temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films.