Effects of the compliance current on the resistive switching behavior of TiO2 thin films

被引：56
|
作者：
Cao, X. [1 ,2 ]
Li, X. M. [1 ]
Gao, X. D. [1 ]
Zhang, Y. W. [1 ,2 ]
Liu, X. J. [1 ]
Wang, Q. [1 ]
Chen, L. D. [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 97卷 / 04期
基金：
上海市自然科学基金;
关键词：
Switching - Nanocrystals - Thin films - Titanium - Titanium dioxide - Silicon compounds - Thermooxidation;
D O I：
10.1007/s00339-009-5351-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanocrystalline TiO2 thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the thermal oxidation of evaporated Ti films. Effects of the compliance current on the resistive switching behavior of the Pt/TiO2/Pt sandwich structures were studied in detail. The reset current increased when the compliance current increased from 10 mA to 20 mA. When the compliance current exceeded 20 mA, the switching behavior disappeared, which could be attributed to the change of the conducting behavior in the low-resistance state. A resistance change ratio of as high as 10(2) was obtained between the high-resistance state and the low-resistance state. The study of the effect of compliance current contributes to obtaining stable and reliable resistive switching behavior for nonvolatile memory applications.
引用
收藏
页码：883 / 887
页数：5
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