Surface pattern recording in amorphous chalcogenide layers

被引：6
|
作者：
Takats, Viktor [1 ,2 ]
Miller, F. C. [2 ]
Jain, Himanshu [2 ]
Cserhati, C. [1 ]
Szabo, I. A. [1 ]
Beke, D. [1 ]
Kokenyesi, S. [1 ]
机构：
[1] Univ Debrecen, Inst Phys, H-4027 Debrecen, Hungary
[2] Lehigh Univ, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2009年 / 355卷 / 37-42期
基金：
匈牙利科学研究基金会;
关键词：
Amorphous films; Electron microscopy; Optical properties; FILMS; NANOMULTILAYERS; INTERDIFFUSION; GLASS;
D O I：
10.1016/j.jnoncrysol.2009.06.043
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Investigations of light-induced volume expansion and surface pattern recording in amorphous chalcogenide layers and nano-layered structures (NLS) were extended to direct electron-beam recording on Se/As2S3 and Sb/As2S3 NLS. Light as well as e-beam induced bleaching occurs in all NLS, while volume expansion occurs only in chalcogenide-chalcogenide NLS and in homogeneous Se or As2S3 layers. Comparison of these two phenomena revealed the possible role of purely electronic and thermal processes in the interdiffusion and relief formation. The latter is supposed to be connected with radiation-induced defect creation, free volume increase under the increased fluidity conditions as well as with the possible additional influence of electrostatic forces and stress. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1849 / 1852
页数：4
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