Transient charge accumulation in pentacene field effect transistor with silver electrode

被引：2

作者：

Manaka, Takaaki ^{[1
]}

Nakao, Motoharu ^{[1
]}

Weis, Martin ^{[1
]}

Liu, Fei ^{[2
]}

Iwamoto, Mitsumasa ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tsinghua Univ, Ctr Adv Study, Beijing 100084, Peoples R China

来源：

THIN SOLID FILMS | 2009年 / 518卷 / 02期

关键词：

Optical second harmonic generation (SHG); Organic field effect transistor; Electrode contact;

D O I：

10.1016/j.tsf.2009.07.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Time-resolved microscopic optical second harmonic generation (TRM-SHG) imaging was employed to study a transient charge accumulation in top-contact pentacene field effect transistor (FET) with Ag electrodes. It was demonstrated that the SHG signal at the edge of the Ag electrode decayed but remained in a steady state depending on biasing condition. An electric field formed in pentacene layer below Ag electrode activates the SHG, indicating the insufficient accumulation of injected carriers in the FET channel. By using the TRM-SHG technique transient change of the carrier density in the OFET is obtained. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：485 / 488

页数：4

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