Fabrication of Cu2SnS3 thin-film solar cells with oxide precursor by pulsed laser deposition

被引：15

作者：

Wang, Yaguang ^{[1
]}

Li, Jianmin ^{[1
]}

Xue, Cong ^{[1
]}

Zhang, Yan ^{[1
]}

Jiang, Guoshun ^{[1
]}

Liu, Weifeng ^{[1
]}

Zhu, Changfei ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE | 2017年 / 52卷 / 11期

关键词：

SULFURIZATION; EFFICIENCY; LAYERS; ABSORBER; QUALITY; GROWTH; CUS;

D O I：

10.1007/s10853-017-0856-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, Cu2SnS3 (CTS) thin film is fabricated through sulfurization of oxide precursor which is deposited by pulsed laser deposition with a mixed CuO/ SnO2 target. XRD and Raman analyses indicate a pure monoclinic Cu2SnS3 phase has been obtained by sulfurization at temperature from 500 to 600 degrees C. A compact and smooth film with polycrystalline structure is observed through SEM result. In addition, the CTS films show excellent absorbance with the band gap around 0.91 eV estimated by UV-Vis, which is suitable for the absorption layer of solar cells. Final devices were fabricated with a SLG/Mo/ CTS/CdS/ i-ZnO/AZO/Al structure. Device performance is improved with the temperature increasing. The best efficiency of CTS-based solar cells is 0.69% with an open-circuit voltage of 144 mV and a short-circuit current density of 18.30 mA/ cm (-2).

引用

页码：6225 / 6234

页数：10

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