A 23mW 4.5/8 GHz IR-UWB Transmitter in 65nm TSMC CMOS Technology

被引:0
|
作者
Donno, A. [1 ,2 ]
D'Amico, S. [1 ,2 ]
De Matteis, M. [3 ]
Baschirotto, A. [3 ]
机构
[1] Univ Salento, Dept Innovat Engn, Lecce, Italy
[2] INFN Lecce, Milan, Italy
[3] Univ Milan, Dept Phys, I-20122 Milan, Italy
关键词
CMOS; impulse radio; transmitter; ultra-wideband;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a low power transmitter for Impulse-Radio Ultra-Wideband (IR-UWB) applications. It generate short duration bi-phase modulated UWB pulses with a center frequency of 4.5/8 GHz according to the selected channel. A simplified transmitter architecture enabling low power consumption has been adopted. The key circuit is a phase shifter used to obtain positive and negative pulses. Generated pulses comply with requirements of the IEEE 802.15.4a standard. The transmitter is designed in 65nm CMOS technology. Simulations results show that the transmitter consumes 23 mW peak power from a 1.2V supply at 8 GHz of work frequency.
引用
收藏
页码:225 / 228
页数:4
相关论文
共 50 条
  • [41] A 285 GHz sub-harmonic injection locked oscillator in 65nm CMOS technology
    Guerra, Jose Moron
    Siligaris, Alexandre
    Lampin, Jean-Francois
    Danneville, Francois
    Vincent, Pierre
    2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS), 2013,
  • [42] A CMOS 65nm 8-15GHz T/R with Multiple Compensation Techniques
    Jing, Jiayu
    Li, Wei
    Hu, Jintao
    Gong, Jie
    Ye, Jiao
    Wang, Chuangguo
    Xu, Hongtao
    2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2021, : 831 - 834
  • [43] An IR-UWB IEEE 802.15.4z Compatible Coherent Asynchronous Polar Transmitter in 28-nm CMOS
    Singh, Gaurav
    Allebes, Erwin
    He, Yuming
    Tiurin, Evgenii
    Mateman, Paul
    Dijkhuis, Johan F.
    van Schaik, Gert-Jan
    Bechthum, Elbert
    van den Heuvel, Johan
    El Soussi, Mohieddine
    Breeschoten, Arjan
    Korpela, Hannu
    Gordebeke, Gert-Jan
    Lemey, Sam
    Bachmann, Christian
    Liu, Yao-Hong
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021, 56 (12) : 3799 - 3810
  • [44] An 86-to-94.3GHz Transmitter with 15.3dBm Output Power and 9.6% Efficiency in 65nm CMOS
    Chao, Yue
    Li, Lianming
    Luong, Howard Cam
    2016 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2016, 59 : 346 - 347
  • [45] A 60Gb/s 173mW Receiver Frontend in 65nm CMOS Technology
    Han, Jaeduk
    Lu, Yue
    Sutardja, Nicholas
    Jung, Kwangmo
    Alon, Elad
    2015 SYMPOSIUM ON VLSI CIRCUITS (VLSI CIRCUITS), 2015,
  • [46] A 11.2 mW 48–62 GHz Low Noise Amplifier in 65 nm CMOS Technology
    Xiao Peng Yu
    Wen Lin Xu
    Chen Feng
    Zheng Hao Lu
    Wei Meng Lim
    Kiat Seng Yeo
    Circuits, Systems, and Signal Processing, 2016, 35 : 1531 - 1543
  • [47] A 165GHz OOK Transmitter with 10.6% Peak DC-to-RF Efficiency in 65nm Bulk CMOS
    Ye, Yu
    Yu, Bo
    Gu, Qun Jane
    2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,
  • [48] Transformer-based 24 GHz Power Amplifier in 65nm CMOS Technology for FMCW Applications
    Muharemovic, Nedim
    Bauch, Andreas
    Hagelauer, Amelie
    Weigel, Robert
    2019 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), 2019, : 371 - 373
  • [49] A Wireless-Powered IR-UWB Transmitter for Long-Range Passive RFID Tags in 90-nm CMOS
    Lee, Kin Keung
    Lande, Tor Sverre
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2014, 61 (11) : 870 - 874
  • [50] A 28 GHz 8-channel Fully Differential Beamforming IC in 65nm CMOS process
    Park, Jeongsoo
    Baek, Donghyun
    Kim, Jeong-Geun
    2019 49TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2019, : 476 - 479