Rapid creation and reversal of skyrmion in spin-valve nanopillars

被引:6
|
作者
Wang, Jinshuai [1 ]
Jin, Chendong [1 ]
Song, Chengkun [1 ]
Xia, Haiyan [1 ]
Wang, Jianbo [1 ,2 ]
Liu, Qingfang [1 ]
机构
[1] Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Gansu, Peoples R China
[2] Lanzhou Univ, Key Lab Special Funct Mat & Struct Design, Minist Educ, Lanzhou 730000, Gansu, Peoples R China
基金
中国国家自然科学基金;
关键词
DYNAMICS; SYMMETRY; LATTICE; MOTION; STATES;
D O I
10.1016/j.jmmm.2018.11.036
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Skyrmions are nanoscale and topologically protected objects, which are promising candidates for information carriers of magnetic storage devices. To this end, the rapid creation and manipulation of a single skyrmion is required. In this work, a spin-valve device with a single-skyrmion reference layer is considered. Using micromagnetic simulations, we find that a skyrmion is likely to nucleate in the free layer as a picosecond current pulse is applied. In addition, we also demonstrate that the skyrmion in the free layer can be reversed by injecting an alternating current. It is promising that such a study can benefit the development of skyrmion-based storage devices.
引用
收藏
页码:472 / 476
页数:5
相关论文
共 50 条
  • [41] Surface spin-valve effect
    Yanson, I. K.
    Naidyuk, Yu. G.
    Fisun, V. V.
    Konovalenko, A.
    Balkashin, O. P.
    Triputen, L. Yu.
    Korenivski, V.
    NANO LETTERS, 2007, 7 (04) : 927 - 931
  • [42] A spin-valve memory cell
    Wang, ZG
    Nakamura, Y
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1996, 159 (1-2) : 233 - 235
  • [43] Development of the spin-valve transistor
    Univ of Twente, Enschede, Netherlands
    IEEE Trans Magn, 5 pt 2 (3495-3499):
  • [44] Spin-Valve tape heads
    Oliveira, Nuno J.
    Freitas, Paulo P.
    Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, 1998, 3 : 255 - 258
  • [45] Luminescent spin-valve transistor
    Appelbaum, I
    Russell, KJ
    Monsma, DJ
    Narayanamurti, V
    Marcus, CM
    Hanson, MP
    Gossard, AC
    APPLIED PHYSICS LETTERS, 2003, 83 (22) : 4571 - 4573
  • [46] Magnetization states driven by spin-transfer torque in spin-valve nanopillars in presence of four-fold magnetocrystalline anisotropy
    Belrhazi, Hamza
    Youssef El Hafidi, Moulay
    El Hafidi, Mohamed
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2020, 510
  • [47] SPIN-VALVE RAM CELL
    TANG, DD
    WANG, PK
    SPERIOSU, VS
    LE, S
    KUNG, KK
    IEEE TRANSACTIONS ON MAGNETICS, 1995, 31 (06) : 3206 - 3208
  • [48] Skyrmion creation and annihilation by spin waves
    Liu, Yizhou
    Yin, Gen
    Zang, Jiadong
    Shi, Jing
    Lake, Roger K.
    APPLIED PHYSICS LETTERS, 2015, 107 (15)
  • [49] Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs
    Asahara, Hirokatsu
    Kanaki, Toshiki
    Ohya, Shinobu
    Tanaka, Masaaki
    APPLIED PHYSICS EXPRESS, 2018, 11 (03)
  • [50] The Investigation of Magnetization Reversal of Free- and Pinning-layers in the Spin-Valve Structures
    Kim, P. D.
    Patrin, G. S.
    Marushchenko, D. A.
    Rudenko, T., V
    Polyakov, V. V.
    Kim, T., V
    JOURNAL OF SIBERIAN FEDERAL UNIVERSITY-MATHEMATICS & PHYSICS, 2012, 5 (02): : 196 - 204