Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O

被引：0
|
作者：
Lai, FI [1 ]
Chen, WY [1 ]
Kao, CC [1 ]
Lin, CF [1 ]
Kuo, HC [1 ]
Wang, SC [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan
来源：
2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS | 2005年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An enhancement of GaN-based LEDs light output using photoelectrochemical (PEC) oxidation method via H2O on the p-GaN surface was demonstrated. The output light was improved 37% after 45min PEC oxidation.
引用
收藏
页码：202 / 203
页数：2
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