Doping Engineering for Improved Immunity against BV Softness and BV Shift in Trench Power MOSFET

被引：0
|
作者：
Deng, Shengling [1 ]
Hossain, Zia [1 ]
Burke, Peter [2 ]
机构：
[1] ON Semicond, Standard Prod Grp, Phoenix, AZ 85008 USA
[2] ON Semicond, Corp R&D, Gresham, OR USA
来源：
2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2016年
关键词：
Trench MOSFET; BVDSS softness; breakdown walk-in / walk-out; charge balance; doping profile; SIMS;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
in this paper, we report typical soft breakdown and BVDSS walk-in/walk-out phenomena observed in the development of ON semiconductor's T8 60V trench power MOSFET. These breakdown behaviors show strong correlation with doping profile. We propose two Ill location-dependent variables, Qint(y) and Cave(y), to assist the study, and demonstrate the effectiveness of them in revealing hidden information behind regular SIMS data. Our study details the methodology of engineering doping profiles for improved breakdown stability.
引用
收藏
页码：375 / 378
页数：4
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