Fe/GaAs(001) and Fe/GaSb(001) heterostructures:: epitaxial growth and magnetic properties

被引：27

作者：

Lépine, B

Lallaizon, C

Ababou, S

Guivarc'h, A

Députier, S

Filipe, A

Van Dau, FN

Schuhl, A

Abel, F

Cohen, C

机构：

[1] Univ Rennes, CNRS, UMR 6627, Equipe Phys Surf & Interfaces, F-35042 Rennes, France

[2] Univ Rennes 1, CNRS, UMR 6511, Chim Solide & Inorgan Mol Lab, F-35042 Rennes, France

[3] Thomson CSF, CNRS, UMR 137, F-91404 Orsay, France

[4] Univ Paris 06, CNRS, UMR 7588, Phys Solides Grp, F-75251 Paris, France

[5] Univ Paris 06, CNRS, UMR 7588, Phys Solides Grp, F-75251 Paris, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

contact metal semiconductors; epitaxy strain; magnetic anisotropy; Fe; GaAs; GaSb;

D O I：

10.1016/S0022-0248(98)01430-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We describe structural and magnetic properties of epitaxially grown Fe/GaAs(0 0 1) and Fe/GaSb(0 0 1) heterostructures. X-ray diffraction, He+ ion channeling and Rutherford backscattering experiments show the good crystalline quality of the 80 nm thick Fe films, which are in compressive strain on GaAs and in tensile strain on GaSb, as expected. The 80 nm thick Fe films grown on the two substrates have the same magnetic properties as bulk alpha-Fe. Finally, we show that the uniaxial magnetic anisotropy present in 1.7 nm Fe/GaAs(0 0 1)structures, up to now unexplained, depends neither on the GaAs surface reconstructions nor on a misorientation of the (0 0 1)GaAs surface. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：702 / 706

页数：5

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