37 W, 75-100 GHz GaN Power Amplifier

被引：0

作者：

Schellenberg, James ^{[1
]}

Tran, Alex ^{[1
]}

Bui, Lani ^{[1
]}

Cuevas, Andrew ^{[1
]}

Watkins, Edward ^{[1
]}

机构：

[1] QuinStar Technol Inc, Torrance, CA 90505 USA

来源：

2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2016年

关键词：

Solid-state power amplifier (SSPA); GaN; Combiner; W-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the first broadband, high-power solid-state power amplifier operating at W-band (75-110 GHz) frequencies. Utilizing a new broadband GaN MMIC chip, we report a radial combiner that effectively combines 24 of these MMICs. This amplifier achieves an average output power of 37 W CW across the 75 to 100 GHz band and more than 50 W below 80 GHz. The computed combining efficiency is, on average, 84.5% across the band. Using forced air cooling (in a wind-tunnel), the amplifier produces an output power of 45.6 dBm (36 W CW) +/- 1.4 dB across the 75 to 100 GHz band.

引用

页数：4

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