Synthesis and Magnetic Properties of Mn4Si7 and Si-Mn4Si7 Axial Heterostructure Nanowire Arrays

被引:13
|
作者
Liu, Hailong [1 ,2 ]
She, Guangwei [1 ]
Huang, Xing [1 ,2 ]
Qi, Xiaopeng [1 ,2 ]
Mu, Lixuan [1 ]
Meng, Xiangmin [1 ]
Shi, Wensheng [1 ]
机构
[1] Chinese Acad Sci, Key Lab Photochem Convers & Optoelect Mat, Tech Inst Phys & Chem, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2013年 / 117卷 / 05期
关键词
ROOM-TEMPERATURE FERROMAGNETISM; MANGANESE-SILICIDE; GROWTH; FILMS; MNSI; SI(111); GE;
D O I
10.1021/jp310700r
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Manganese suicides nanostructures showed great potential applications in microelectronic and optoelectronic devices. In this study, Mn4Si7 and Si Mn4Si7 axial heterostructure nanowire arrays were synthesized by the in-situ reaction between Si nanowire arrays and MnCl2. Depending on the reaction durations and processes, structures (Mn4Si7 nanowires or Si-Mn4Si7 axial heterostructure nanowires) and lengths of the Mn4Si7 nanowires could be readily tuned. Phase identification were performed by the XRD, TEM, HRTEM, and SAED means, which results indicated that the assynthesized nanowire is Nowotny chimney ladder (NCL) structure Mn4Si7 with a tetragonal structure. The Mn4Si7 nanowire arrays exhibited enhanced ferromagnetism comparing with other bulk higher manganese silicides. The Curie temperature of the Mn4Si7 nanowire arrays is over 300 K, which is much higher than that of the previous reports. Because of the good compatibility with Si-based nanowire devices and many favorable properties, these Mn4Si7 nanowire arrays have wide potential applications in the Si-based self-assembly nanowire devices.
引用
收藏
页码:2377 / 2381
页数:5
相关论文
共 50 条
  • [1] Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions
    T. S. Kamilov
    L. L. Aksenova
    B. Z. Sharipov
    I. V. Ernst
    Semiconductors, 2015, 49 : 1281 - 1284
  • [2] The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures
    Kamilov T.S.
    Rysbaev A.S.
    Klechkovskaya V.V.
    Orekhov A.S.
    Igamov B.D.
    Bekpulatov I.R.
    Applied Solar Energy (English translation of Geliotekhnika), 2019, 55 (06): : 380 - 384
  • [3] Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes
    D. M. Shukurova
    A. S. Orekhov
    B. Z. Sharipov
    V. V. Klechkovskaya
    T. S. Kamilov
    Technical Physics, 2011, 56 : 1423 - 1428
  • [4] Magnetic and electronic properties of Mn4Si7
    Sulpice, A
    Gottlieb, U
    Affronte, M
    Laborde, O
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 : 519 - 520
  • [5] Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures
    T. S. Kamilov
    I. V. Ernst
    A. Yu. Samunin
    Technical Physics, 2014, 59 : 1833 - 1838
  • [6] Photoconduction amplification and quenching in the Mn4Si7-Si⟨Mn⟩-Mn4Si7 and Mn4Si7-Si⟨Mn⟩-M heterostructures
    Kamilov, T. S.
    Ernst, I. V.
    Samunin, A. Yu.
    TECHNICAL PHYSICS, 2014, 59 (12) : 1833 - 1838
  • [7] Mn4Si7-SiaOE©Mn⟩-Mn4Si7 and Mn4Si7-SiaOE©Mn⟩-M photodiodes
    Shukurova, D. M.
    Orekhov, A. S.
    Sharipov, B. Z.
    Klechkovskaya, V. V.
    Kamilov, T. S.
    TECHNICAL PHYSICS, 2011, 56 (10) : 1423 - 1428
  • [8] Magnetic properties of single crystalline Mn4Si7
    Gottlieb, U. (ulrich.gottlieb@inpg.fr), 1600, Elsevier Ltd (361): : 1 - 2
  • [9] Magnetic properties of single crystalline Mn4Si7
    Gottlieb, U
    Sulpice, A
    Lambert-Andron, B
    Laborde, O
    JOURNAL OF ALLOYS AND COMPOUNDS, 2003, 361 (1-2) : 13 - 18
  • [10] Analysis of the Induced Photothermal Conduction in the Mn4Si7-Si⟨Mn⟩-Mn4Si7 and Mn4Si7-Si⟨Mn⟩-M Heterojunctions
    Kamilov, T. S.
    Klechkovskaya, V. V.
    Sharipov, B. Z.
    Turaev, A.
    TECHNICAL PHYSICS, 2013, 58 (08) : 1182 - 1188