The Study on RF Front-End Circuit Design Based on Low-Noise Amplifier Architecture

被引：0

作者：

Zhao San-ping

机构：

来源：

INFORMATION AND MANAGEMENT ENGINEERING, PT VI | 2011年 / 236卷

关键词：

RF; Front-end Circuit; Low-noise Amplifier; FOLDED-SWITCHING MIXER; LOW-VOLTAGE; HIGH-GAIN;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a low power, high linearity and high gain front-end circuit with novel LNA in 0.18 mu m CMOS technology for 5.2 GHz wireless applications is proposed. By employing current-bleeding and current-enhanced techniques, the conversion gain and the linearity can be increased and the power consumption is reduced. The complementary common-gate LNA is adopted to reduce noise and to improve linearity. With the LO power of 0 dBm, the proposed front-end circuit has conversion gain of 18.4 dB, input 1-dB compression point of -16 dBm and IIP3 of -6 dBm, while it consumes only 9.4mW. The chip size including pads is 0.767mm x 0.96mm.

引用

页码：13 / 19

页数：7

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