Structural properties of InN thin films grown with variable growth conditions on GaN/Al2O3 by plasma-assisted MBE

被引：0

作者：

Delimitis, A. ^{[1
]}

Komninou, Ph ^{[1
]}

Kehagias, Th ^{[1
]}

Karakostas, Th ^{[1
]}

Dimakis, E. ^{[1
]}

Georgakilas, A. ^{[1
]}

Nouet, G. ^{[1
]}

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, GR-54124 Thessaloniki, Greece

来源：

Microscopy of Semiconducting Materials | 2005年 / 107卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The structural characteristics of compact and columnar InN films grown by molecular beam epitaxy oil GaN templates are investigated by transmission electron microscopy. Compact mode of growth is favoured at low substrate temperatures, below 500 degrees C, and by the introduction of an InN nucleation layer prior to the InN epilayer growth. Improved quality compact InN films, having threading dislocations with densities on the order of 10(9) 10(10) cm(-2), are achieved by using high In/N flux ratios. Compact films generally exhibit higher in-plane lattice constant values than columnar ones and, consequently, higher densities of InN/GaN interfacial misfit dislocations.

引用

页码：71 / 74

页数：4

共 50 条

[21] Analyzing Structural Optical and Phonon Characteristics of Plasma-Assisted Molecular-Beam Epitaxy-Grown InN/Al2O3 Epifilms
Talwar, Devki N.
Chen, Li Chyong
Chen, Kuei Hsien
Feng, Zhe Chuan
NANOMATERIALS, 2025, 15 (04)
[22] Structural characterization of InN epilayers grown on r-plane sapphire by plasma-assisted MBE
Lotsari, A.
Dimitrakopulos, G. P.
Kehagias, Th
Ajagunna, A. O.
Iliopoulos, E.
Georgakilas, A.
Komninou, Ph
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 534 - 537
[23] Properties of GaN Nanocolumns Grown by Plasma-Assisted MBE on Si (111) Substrates
Zytkiewicz, Z. R.
Dluzewski, P.
Borysiuk, J.
Sobanska, M.
Klosek, K.
Witkowski, B. S.
Setkiewicz, M.
Pustelny, T.
ACTA PHYSICA POLONICA A, 2011, 120 (6A) : A15 - A16
[24] Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE
Dimitrakopulos, G. P.
Kioseoglou, J.
Dimakis, E.
Georgakilas, A.
Nouet, G.
Komninou, Ph.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (09): : 2151 - 2155
[25] Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures
Guillen-Cervantes, A.
Rivera-Alvarez, Z.
Lopez-Lopez, M.
Ponce-Pedraza, A.
Guarneros, C.
Sanchez-Resendiz, V. M.
APPLIED SURFACE SCIENCE, 2011, 258 (03) : 1267 - 1271
[26] Growth and properties of thin Al2O3 films
Mittov, O.N.
Sysoev, B.I.
Bezryadin, M.N.
Linnik, V.D.
Poverkhnost Fizika Khimiya Mekhanika, 1992, (10-11):
[27] GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE
Kim, E
Rusakova, I
Berishev, I
Tempez, A
Bensaoula, A
JOURNAL OF CRYSTAL GROWTH, 2002, 243 (3-4) : 456 - 462
[28] Effects of AlN buffer layers on the structural and the optical properties of GaN epilayers grown on Al2O3 substrates by using plasma-assisted molecular beam epitaxy
Hee Chang Jeon
Seung Joo Lee
Sunil Kumar
Tae Won Kang
Nam Hyun Lee
Tae Whan Kim
Journal of the Korean Physical Society, 2014, 64 : 1128 - 1131
[29] Effects of AlN Buffer Layers on the Structural and the Optical Properties of GaN Epilayers Grown on Al2O3 Substrates by using Plasma-assisted Molecular Beam Epitaxy
Jeon, Hee Chang
Lee, Seung Joo
Kumar, Sunil
Kang, Tae Won
Lee, Nam Hyun
Kim, Tae Whan
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 64 (08) : 1128 - 1131
[30] Composition and bonding structure of plasma-assisted ALD Al2O3 films
Verlaan, V.
van den Elzen, L. R. J. G.
Dingemans, G.
de Sanden, M. C. M. van
Kessels, W. M. M.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4): : 976 - 979

← 1 2 3 4 5 →