Study of the intermediate layer at the n +-CdS/p-CdTe interface

被引：8

作者：

Muzafarova, S. A. ^{[1
]}

Aitbaev, B. U. ^{[1
]}

Mirsagatov, Sh. A. ^{[1
]}

Durshimbetov, K. ^{[2
]}

Zhanabergenov, Zh. ^{[3
]}

机构：

[1] Acad Sci Uzbek, NPO Fizika Solntsa, Inst Physicotech, Tashkent 700084, Uzbekistan

[2] Karakalpak State Univ, Nukus 708004, Uzbekistan

[3] Karakalpak State Pedag Inst, Nukus 708004, Uzbekistan

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 12期

关键词：

D O I：

10.1134/S1063782608120014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of production conditions and subsequent stimulation by ultrasonic irradiation on the formation of a solid solution at the n-CdS/p-CdTe interface in solar cells has been investigated. The phase composition of the solid-solution transient layer was investigated by a nondestructive photoelectric method (measurement of the spectral distribution of photosensitivity in the gate and photodiode modes). It is shown that the phase composition and thickness of the intermediate CdTe1-x S (x) layer depend strongly on the heterostructure formation conditions.

引用

页码：1377 / 1382

页数：6

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