Study of the intermediate layer at the n +-CdS/p-CdTe interface

被引：8
|
作者：
Muzafarova, S. A. [1 ]
Aitbaev, B. U. [1 ]
Mirsagatov, Sh. A. [1 ]
Durshimbetov, K. [2 ]
Zhanabergenov, Zh. [3 ]
机构：
[1] Acad Sci Uzbek, NPO Fizika Solntsa, Inst Physicotech, Tashkent 700084, Uzbekistan
[2] Karakalpak State Univ, Nukus 708004, Uzbekistan
[3] Karakalpak State Pedag Inst, Nukus 708004, Uzbekistan
来源：
SEMICONDUCTORS | 2008年 / 42卷 / 12期
关键词：
D O I：
10.1134/S1063782608120014
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of production conditions and subsequent stimulation by ultrasonic irradiation on the formation of a solid solution at the n-CdS/p-CdTe interface in solar cells has been investigated. The phase composition of the solid-solution transient layer was investigated by a nondestructive photoelectric method (measurement of the spectral distribution of photosensitivity in the gate and photodiode modes). It is shown that the phase composition and thickness of the intermediate CdTe1-x S (x) layer depend strongly on the heterostructure formation conditions.
引用
收藏
页码：1377 / 1382
页数：6
相关论文
共 50 条
  • [1] Study of the intermediate layer at the n+-CdS/p-CdTe interface
    S. A. Muzafarova
    B. U. Aitbaev
    Sh. A. Mirsagatov
    K. Durshimbetov
    Zh. Zhanabergenov
    Semiconductors, 2008, 42
  • [2] Growth of CdS and CdTe thin films for the fabrication of n-CdS/p-CdTe solar cell
    Sharma, RK
    Jain, K
    Rastogi, AC
    CURRENT APPLIED PHYSICS, 2003, 3 (2-3) : 199 - 204
  • [3] The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures
    Kabulov R.R.
    Makhmudov M.A.
    Ataboev O.K.
    Khazhiev M.U.
    Applied Solar Energy, 2016, 52 (1) : 61 - 67
  • [4] Injection photodiode based on an n-CdS/p-CdTe heterostructure
    Sh. A. Mirsagatov
    R. R. Kabulov
    M. A. Makhmudov
    Semiconductors, 2013, 47 : 825 - 830
  • [5] Characterization of p-CdTe/n-CdS hetero-junctions
    Mahesha, M. G.
    Bangera, Kasturi V.
    Shivakumar, G. K.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2009, 12 (03) : 89 - 93
  • [6] The specificity of photoluminescence n-CdS/p-CdTe in semiconductor heterostructures
    Polvonov, B. Z.
    Gafurov, Yu, I
    Otajonov, U. A.
    Nasirov, M. X.
    Zaylobiddinov, B. B.
    INTERNATIONAL JOURNAL OF MATHEMATICS AND PHYSICS, 2022, 13 (02): : 12 - 19
  • [7] Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions
    S. A. Muzafarova
    Sh. A. Mirsagatov
    J. Janabergenov
    Physics of the Solid State, 2007, 49 : 1168 - 1174
  • [8] EFFECT OF ULTRASOUND IRRADIATION ON AN n-CdS / p-CdTe HETEROSTRUCTURE
    Muzafarova, S. A.
    Mirsagatov, Sh. A.
    UKRAINIAN JOURNAL OF PHYSICS, 2006, 51 (11-12): : 1125 - 1129
  • [9] INVESTIGATION OF DEFECTS IN N+-CDS/P-CDTE SOLAR CELLS
    Kharangarh, P.
    Misra, D.
    Georgiou, G. E.
    Delahoy, A. E.
    Cheng, Z.
    Liu, G.
    Opyrchal, H.
    Gessert, T.
    Chin, K. K.
    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012, : 1286 - 1290
  • [10] Injection photodiode based on an n-CdS/p-CdTe heterostructure
    Mirsagatov, Sh. A.
    Kabulov, R. R.
    Makhmudov, M. A.
    SEMICONDUCTORS, 2013, 47 (06) : 825 - 830
12345