Study of Defects on Zn0.95Mn0.05O by Using Deep Level Transient Spectroscopy

Defect states are important to the characteristics of diluted magnetic semiconductor materials. In this study, the electrical activation energies of the defects of Zn0.95Mn0.05O were analyzed by using deep level transient spectroscopy (DLTS). The Zn0.95Mn0.05O films had been deposited with growth temperature modulation by using a pulsed laser deposition method with a mixture target. In the films grown at 450 degrees C, the carrier concentration was about 1 x 10(16) cm(-3) based on the carrier profile of the capacitance-voltage measurement. X-ray diffraction showed a ZnO based Wurtzite structure. The DLTS signals appeaxing in the ZnMnO have an activation energy of 0.13 eV and are thougth to be due to defects originating from Mn-related site. The oxygen vacancy defect was also observed in the DLTS spectra.