Effect of Ion-beam Assisted Deposition on Resistivity and Crystallographic Structure of Cr/Cu

被引：3
|
作者：
Jung, Yang-Il [1 ]
Lee, Jung-Suk [1 ]
Park, Jeong-Yong [1 ]
Jeong, Yong-Hwan [1 ]
Moon, Kyoung-Seok [2 ]
Kim, Kyoung-Sun [2 ]
机构：
[1] Korea Atom Energy Res Inst, Fus Technol Div, Taejon 305353, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Technol, Taejon 305701, South Korea
来源：
ELECTRONIC MATERIALS LETTERS | 2009年 / 5卷 / 03期
关键词：
resistivity; copper; ibad; equilibrium shape;
D O I：
10.3365/eml.2009.09.105
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ion-beam assisted deposition (IBAD) for Cr/Cu coatings was investigated. For high density and electric resistivity, IBAD was found to be an appropriate method. The density was increased from 8.60 g/cm(3) to 8.85 g/cm(3), depending on IBAD conditions, and the resistivity was increased from 6.4 mu Omega.cm to 7.2 mu Omega.cm. It is also suggested that the crystallographic orientations of polycrystalline Cu surfaces were able to be aligned to (111) planes by the IBAD process.
引用
收藏
页码：105 / 107
页数：3
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