MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors

被引：11
|
作者：
Shen, Aidong [1 ]
Ravikumar, Arvind Pawan [2 ]
Chen, Guopeng [1 ]
Zhao, Kuaile [1 ]
Alfaro-Martinez, Adrian [3 ]
Garcia, Thor [3 ]
de Jesus, Joel [3 ]
Tamargo, Maria C. [3 ]
Gmachl, Claire [2 ]
机构：
[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA
[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[3] CUNY City Coll, Dept Chem, New York, NY 10031 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 03期
基金：
美国国家科学基金会;
关键词：
DETECTORS; DOTS;
D O I：
10.1116/1.4794383
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report the growth of quantum well infrared photodetectors (QWIPs) made from wide band gap II-VI semiconductors. ZnCdSe/ZnCdMgSe QWIPs in both medium-wave infrared and long-wave infrared regions were grown by molecular beam epitaxy on InP substrates. High-resolution x-ray diffraction and photoluminescence measurements showed that the as-grown samples have high structural and optical quality. Spectral responses with peaks at 8.7 mu m and 4.0 mu m have been obtained. (C) 2013 American Vacuum Society.
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页数：3
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