Molecular beam epitaxy of periodic BaF2/PbEuSe layers on Si(111)

被引：4
|
作者：
Fang, XM [1 ]
Wu, HZ
Shi, Z
McCann, PJ
Dai, N
机构：
[1] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA
[2] Univ Oklahoma, Lab Elect Properties Mat, Norman, OK 73019 USA
[3] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 03期
关键词：
D O I：
10.1116/1.590744
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bragg reflector structures consisting of BaF2/PbEuSe stacks have been epitaxially grown on CaF2/Si (111) substrates, The reflectors are centered at a wavelength of 4.0 mu m with a bandwidth of about 3.0 mu m. Reflectivity as high as 95% at the center wavelength has been achieved in three-stack reflectors. Cracks were visible under an optical Normarski microscope in two-stack reflectors, The formation of cracks is probably due to the accumulation of the residual thermal strain in thick layers or the hindrance of dislocation glide at the BaF2/PbEuSe interfaces. (C) 1999 American Vacuum Society. [S0734-211X(99)06203-4].
引用
收藏
页码：1297 / 1300
页数：4
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