Barium silicate modified strontium bismuth tantalate ferroelectric thin films

被引：1

作者：

Bozgeyik, Mehmet S. ^{[1
,2
,3
]}

机构：

[1] Tokyo Inst Technol, Dept Met & Ceram Sci, Meguro Ku, 2-12-1 S7 Ookayama, Tokyo 1528550, Japan

[2] Kahramanmaras Sutcu Imam Univ, Fac Sci & Literature, Dept Phys, TR-46100 Kahramanmaras, Turkey

[3] Kahramanmaras Sutcu Imam Univ, Grad Sch Nat & Appl Sci, Dept Mat Sci & Engn, TR-46100 Kahramanmaras, Turkey

来源：

CHINESE JOURNAL OF PHYSICS | 2018年 / 56卷 / 01期

基金：

日本学术振兴会;

关键词：

Ferroelectric; Strontium bismuth tantalate; Barium silicate; FeRAMs; FeFETs; DIELECTRIC-BREAKDOWN; SRBI2TA2O9; SR0.8BI2.2TA2O9;

D O I：

10.1016/j.cjph.2017.11.019

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Novel strontium bismuth tantalate (Sr0.8Bi2.2Ta2O9 (SBT)) modified with 3 and 5 mol% ratio barium silicate (Ba2SiO4) thin films were grown on Pt(100 nm)/Ti(50 nm)/SiO2/Si(100) substrates by spin coating technique. The influence of barium silicate doping in SBT was studied from the view point of changing dielectric and ferroelectric properties like dielectric constant (epsilon(r)) and remnant polarization (P-r). Well crystallized thin films showed convenient ferroelectric properties with comparatively lower P-r in the range between 1.52 and 0.44 mu C/cm(2) and smaller er value of 163. Thus, with such reduced values of P-r and er barium silicate modified SBT offers a useful potential to be used in Ferroelectric Field Effect Transistor (FeFET) type (1T-type) Ferroelectric Random Access Memories (FeRAMs) upon improving insulation properties.

引用

页码：40 / 45

页数：6

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