Mechanism for low temperature activation of Mg-doped GaN with Ni catalysts

被引：23
|
作者：
Waki, I
Fujioka, H
Oshima, M
Miki, H
Okuyama, M
机构：
[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
[2] Showa Denko Co Ltd, Cent Res Lab, Chichibu Res Lab, Chichibu, Saitama 3691871, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 12期
关键词：
D O I：
10.1063/1.1417999
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The activation mechanism of Mg-doped GaN with Ni catalysts has been investigated by thermal desorption spectroscopy. It has been revealed that Ni deposited on Mg-doped GaN enhances the hydrogen recombination reaction at temperatures below 200 degreesC with the activation energy of 1.3 eV. The hydrogen desorbed at this temperature can be attributed to a part of the passivating hydrogen in GaN with a weak binding energy. The enhancement of the hydrogen recombination reaction on the GaN surface is essential to decreasing hydrogen concentration efficiently at low temperatures. (C) 2001 American Institute of Physics.
引用
收藏
页码：6500 / 6504
页数：5
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