Design of Low Inductance SiC-MOS/Si-IGBT Hybrid Module for PV Inverters

被引：2
|
作者：
Wang, Ye [1 ]
Chen, Min [1 ]
Xu, Dehong [1 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China
来源：
IEEE OPEN JOURNAL OF POWER ELECTRONICS | 2022年 / 3卷
基金：
中国国家自然科学基金;
关键词：
Hybrid module; stacked bond wire substrates; parasitic inductance; inverter; POWER MODULE;
D O I：
10.1109/OJPEL.2022.3224140
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, design of a low parasitic inductance T-type SiC-MOS/Si-IGBT hybrid module for PV inverters is studied. Current commutation loops and self- and mutual inductances model of the hybrid module are analyzed. Then stacked substrates structures with vertical power commutation loop to reduce parasitic inductance are identified and compared. Finally, a hybrid module with stacked bond wire substrates structure is built and test results are provided to verify the design.
引用
收藏
页码：942 / 954
页数：13
相关论文
共 50 条
  • [21] Simulation and Experimental Results of 3.3kV Cross Switch "Si-IGBT and SiC-MOSFET" Hybrid
    Venmlapati, Umamaheswara Reddy
    Miliaila, Andrei
    Minamisawa, Renato Amaral
    Canales, Francisco
    Rahimo, Munaf
    Papadopoulos, Charalampos
    2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, : 163 - 166
  • [22] Design and evaluation of SiC multichip power module with low and symmetrical inductance
    Shao Weihua
    Li Ran
    Zeng Zheng
    Li Xiaoling
    Mawby, Philip
    JOURNAL OF ENGINEERING-JOE, 2019, (17): : 3573 - 3577
  • [23] Exact Circuit Power Loss Design Method for High Power Density Converters Utilizing Si-IGBT/SiC-Diode Hybrid Pairs
    Takao, Kazuto
    Ohashi, Hiromichi
    2008 13TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-5, 2008, : 54 - +
  • [24] Neutral Leg Design and Control of Electric Vehicle On-board Bidirectional Charger Based on SiC-MOSFET and Si-IGBT Hybrid Devices
    Fu Y.
    Ren H.
    Li H.
    Shi L.
    Lei M.
    Yan K.
    Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2020, 40 (19): : 6330 - 6344
  • [25] Accurate Power Circuit Loss Estimation Method for Power Converters With Si-IGBT and SiC-Diode Hybrid Pair
    Takao, Kazuto
    Ohashi, Hiromichi
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (02) : 606 - 612
  • [26] Design Comparison of High Power Medium-Voltage Converters based on 6.5kV Si-IGBT/Si-PiN diode, 6.5kV Si-IGBT/SiC-JBS diode, and 10kV SiC MOSFET/SiC-JBS diode
    Mirzaee, Hesam
    De, Ankan
    Tripathi, Awneesh
    Bhattacharya, Subhashish
    2011 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2011, : 2421 - 2428
  • [27] Design Consideration of High Power Density Inverter with Low-on-voltage SiC-JBS and High-speed Gate Driving of Si-IGBT
    Takao, K.
    Ota, C.
    Nishio, J.
    Shinohe, T.
    Obashi, H.
    APEC: 2009 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1- 4, 2009, : 397 - +
  • [28] High Power Density 1700-V/ 300-A Si-IGBT and SiC-MOSFET Hybrid Switch-based Half-bridge Power Module
    Deshpande, Amol
    Imran, Asif
    Paul, Riya
    Yuan, Zhao
    Peng, Hongwu
    Luo, Fang
    2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2020, : 3979 - 3986
  • [29] Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers offering superior surge current capability and reduced power losses
    Sundaresan, S. G.
    Sturdevant, C.
    Issa, H.
    Marripelly, M.
    Lieser, E.
    Singh, R.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 945 - 948
  • [30] Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSPET/SiC-JBS Diode
    Mirzaee, Hesam
    De, Ankan
    Tripathi, Awneesh
    Bhattacharya, Subhashish
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2014, 50 (04) : 2728 - 2740
12345