Design of Low Inductance SiC-MOS/Si-IGBT Hybrid Module for PV Inverters

被引：2
|
作者：
Wang, Ye [1 ]
Chen, Min [1 ]
Xu, Dehong [1 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China
来源：
IEEE OPEN JOURNAL OF POWER ELECTRONICS | 2022年 / 3卷
基金：
中国国家自然科学基金;
关键词：
Hybrid module; stacked bond wire substrates; parasitic inductance; inverter; POWER MODULE;
D O I：
10.1109/OJPEL.2022.3224140
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, design of a low parasitic inductance T-type SiC-MOS/Si-IGBT hybrid module for PV inverters is studied. Current commutation loops and self- and mutual inductances model of the hybrid module are analyzed. Then stacked substrates structures with vertical power commutation loop to reduce parasitic inductance are identified and compared. Finally, a hybrid module with stacked bond wire substrates structure is built and test results are provided to verify the design.
引用
收藏
页码：942 / 954
页数：13
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