Microcrystalline B-doped window layers prepared near amorphous to microcrystalline transition by HWCVD and its application in amorphous silicon solar cells

被引：18

作者：

Kumar, P ^{[1
]}

Kupich, M ^{[1
]}

Grunsky, D ^{[1
]}

Schroeder, B ^{[1
]}

机构：

[1] Univ Kaiserslautern, Dept Phys, Ctr Opt Technol & Laser Controlled Proc, D-67653 Kaiserslautern, Germany

来源：

THIN SOLID FILMS | 2006年 / 501卷 / 1-2期

关键词：

hot-wire deposition; microcrystalline p-layer; solar cells;

D O I：

10.1016/j.tsf.2005.07.151

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic and structural properties of p-type microcrystalline silicon films prepared near the microcrystalline to amorphous (mu c-amorphous) transition by hot-wire chemical vapor deposition are studied. Silane is used as a source gas while H-2 as diluent and trimethylboron (TMB) and boron trifluoride (BF3) as doping gases. Increasing TMB concentration from 0.01% to 5% favors the amorphous growth whereas for BF3 the crystalline fraction remains constant. The dark conductivity (sigma(d)) of mu c-Si:H p-layers remains approximately constant for TMB=1-5% at constant crystalline fraction X-c. This dark conductivity behavior is attributed to the decrease in doping efficiency with increasing TMB concentration. The best initial efficiency obtained for a 400 nm amorphous pin solar cell with optimized mu c-Si:H p-layer is 7.7% (V-oc = 874 mV, J(sc) = 12.91 mA/cm(2), FF = 68%). (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：260 / 263

页数：4

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