Binding energy, polarizability, and diamagnetic response of shallow donor impurity in zinc blende GaN quantum dots

被引:15
|
作者
Iqraoun, E. [1 ]
Sali, A. [1 ]
El-Bakkari, K. [1 ]
Mora-Ramos, M. E. [2 ]
Duque, C. A. [3 ]
机构
[1] Sidi Mohamed Ben Abdellah Univ, Fac Sci, Dept Phys, BP 1796, Dhar El Mahraz, Fez, Morocco
[2] Univ Autonoma Estado Morelos, Ctr Invest Ciencias IICBA, Ave Univ 1001, Cuernavaca 62209, Morelos, Mexico
[3] Univ Antioquia UdeA, Fac Ciencias Exactas & Nat, Inst Fis, Grp Mat Condensada UdeA, Calle 70 52-21, Medellin, Colombia
来源
MICRO AND NANOSTRUCTURES | 2022年 / 163卷
关键词
Conical quantum dot; Polarizability; Dipole moment; Binding energy; Binding energy Stark shift; Diamagnetic susceptibility; CONDUCTION-BAND NONPARABOLICITY; ELECTRIC-FIELD; HYDROSTATIC-PRESSURE; OPTICAL-PROPERTIES; HYDROGENIC IMPURITY; SUSCEPTIBILITY; TEMPERATURE; WELL; STATES; LASER;
D O I
10.1016/j.spmi.2021.107142
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this theoretical investigation, the binding energy, the binding energy Stark-shift, the dipole moment, the polarizability, and the diamagnetic susceptibility related with a confined shallow donor impurity in zinc blende GaN conical-shaped quantum dots are calculated under the effect of an electric field applied along the z-direction. Calculations have been made by using a variational approach within the infinite confining potential model and considering the parabolic conduction band and the effective mass approximations. The results suggest important dependencies of the calculated physical properties on the variation of the dot dimensions, axial impurity position, and the intensity of the applied electric field. It is observed that: i) the binding energy Stark shift increases up to a maximum value and then decreases with increasing the strength of the electric field, and it is strongly influenced by the impurity position and geometrical parameters, ii) for a fixed electric field value, the binding energy Stark shift is always an increasing function of the dot height, and iii) for fixed electric field values, the binding energy Stark shift shows a mixed behavior concerning the dot radius, i.e., for low field strength, the binding energy is always a growing function of the radius, and for large field strengths, such physical quantity grows with the radius up to a maximum and then decreases. Furthermore, the electric field (the strong quantum confinement) enhances slightly (diminishes) the diamagnetic susceptibility of impurity.
引用
收藏
页数:12
相关论文
共 50 条
  • [21] Polarization properties of single zinc-blende GaN/AlN quantum dots
    Sergent, S.
    Kako, S.
    Buerger, M.
    Schupp, T.
    As, D. J.
    Arakawa, Y.
    PHYSICAL REVIEW B, 2014, 90 (23)
  • [22] Electronic structure and optical properties of zinc-blende GaN quantum dots
    Feng, DH
    Jia, TQ
    Xu, ZZ
    CHINESE PHYSICS, 2003, 12 (09): : 1016 - 1020
  • [23] Cubic GaN quantum dots embedded in zinc-blende AlN microdisks
    Buerger, M.
    Kemper, R. M.
    Bader, C. A.
    Ruth, M.
    Declair, S.
    Meier, C.
    Foerstner, J.
    As, D. J.
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 287 - 290
  • [24] Optical properties of wurtzite and zinc-blende GaN/AlN quantum dots
    Fonoberov, VA
    Balandin, AA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04): : 2190 - 2194
  • [25] The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot
    Wu, Huiting
    Wang, Hailong
    Jiang, Liming
    Gong, Qian
    Feng, Songlin
    PHYSICA B-CONDENSED MATTER, 2009, 404 (01) : 122 - 126
  • [26] Polaron and conduction band non-parabolicity effects on the binding energy, diamagnetic susceptibility and polarizability of an impurity in quantum rings
    El-Bakkari, K.
    Sali, A.
    Iqraoun, E.
    Ezzarfi, A.
    SUPERLATTICES AND MICROSTRUCTURES, 2020, 148
  • [27] Polarizability and binding energy of a shallow donor in spherical quantum dot-quantum well (QD-QW)
    Rahmani, K.
    Chrafih, Y.
    M'Zred, S.
    Janati, S.
    Zorkani, I.
    Jorio, A.
    Mmadi, A.
    1ST INTERNATIONAL ONLINE CONFERENCE ON NANOSCIENCE & NANOTECHNOLOGY (N@NO'2017), 2018, 984
  • [28] Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well
    Pattammal, M.
    Peter, A. John
    APPLIED SURFACE SCIENCE, 2010, 256 (22) : 6748 - 6752
  • [29] Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots
    Sadeghi E.
    Naghdi E.
    Nano Convergence, 1 (1)
  • [30] External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire
    Wang, Hailong
    Jiang, Liming
    Gong, Qian
    Feng, Songlin
    PHYSICA B-CONDENSED MATTER, 2010, 405 (18) : 3818 - 3821