Binding energy, polarizability, and diamagnetic response of shallow donor impurity in zinc blende GaN quantum dots

被引:15
|
作者
Iqraoun, E. [1 ]
Sali, A. [1 ]
El-Bakkari, K. [1 ]
Mora-Ramos, M. E. [2 ]
Duque, C. A. [3 ]
机构
[1] Sidi Mohamed Ben Abdellah Univ, Fac Sci, Dept Phys, BP 1796, Dhar El Mahraz, Fez, Morocco
[2] Univ Autonoma Estado Morelos, Ctr Invest Ciencias IICBA, Ave Univ 1001, Cuernavaca 62209, Morelos, Mexico
[3] Univ Antioquia UdeA, Fac Ciencias Exactas & Nat, Inst Fis, Grp Mat Condensada UdeA, Calle 70 52-21, Medellin, Colombia
来源
MICRO AND NANOSTRUCTURES | 2022年 / 163卷
关键词
Conical quantum dot; Polarizability; Dipole moment; Binding energy; Binding energy Stark shift; Diamagnetic susceptibility; CONDUCTION-BAND NONPARABOLICITY; ELECTRIC-FIELD; HYDROSTATIC-PRESSURE; OPTICAL-PROPERTIES; HYDROGENIC IMPURITY; SUSCEPTIBILITY; TEMPERATURE; WELL; STATES; LASER;
D O I
10.1016/j.spmi.2021.107142
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this theoretical investigation, the binding energy, the binding energy Stark-shift, the dipole moment, the polarizability, and the diamagnetic susceptibility related with a confined shallow donor impurity in zinc blende GaN conical-shaped quantum dots are calculated under the effect of an electric field applied along the z-direction. Calculations have been made by using a variational approach within the infinite confining potential model and considering the parabolic conduction band and the effective mass approximations. The results suggest important dependencies of the calculated physical properties on the variation of the dot dimensions, axial impurity position, and the intensity of the applied electric field. It is observed that: i) the binding energy Stark shift increases up to a maximum value and then decreases with increasing the strength of the electric field, and it is strongly influenced by the impurity position and geometrical parameters, ii) for a fixed electric field value, the binding energy Stark shift is always an increasing function of the dot height, and iii) for fixed electric field values, the binding energy Stark shift shows a mixed behavior concerning the dot radius, i.e., for low field strength, the binding energy is always a growing function of the radius, and for large field strengths, such physical quantity grows with the radius up to a maximum and then decreases. Furthermore, the electric field (the strong quantum confinement) enhances slightly (diminishes) the diamagnetic susceptibility of impurity.
引用
收藏
页数:12
相关论文
共 50 条
  • [1] Shallow-donor impurity in zinc-blende InGaN/GaN asymmetric coupled quantum dots: Effect of electric field
    Xia, Congxin
    Zeng, Zaiping
    Wei, Shuyi
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (05)
  • [2] Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots
    Xia, Congxin
    Liu, Yaming
    Wei, Shuyi
    PHYSICS LETTERS A, 2008, 372 (42) : 6420 - 6423
  • [3] Pressure effects on the donor binding energy in zinc-blende InGaN/GaN quantum dot
    Xia, Congxin
    Wang, Tianxing
    Wei, Shuyi
    SUPERLATTICES AND MICROSTRUCTURES, 2009, 46 (06) : 840 - 845
  • [4] Donor impurity states in zinc-blende InGaN/GaN asymmetric coupled quantum dots: Hydrostatic pressure effect
    Xia, Congxin
    Zeng, Zaiping
    Chang, Q.
    Wei, Shuyi
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (08): : 2041 - 2046
  • [5] Electric field effect on the donor impurity states in zinc-blende symmetric InGaN/GaN coupled quantum dots
    Xia, Congxin
    Zeng, Zaiping
    Wei, Shuyi
    PHYSICS LETTERS A, 2009, 374 (01) : 97 - 100
  • [6] External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1-xN/GaN Symmetric Coupled Quantum Dots
    Wang, Guang-Xin
    Zhang, Li-Li
    Wei, Huan
    ADVANCES IN CONDENSED MATTER PHYSICS, 2017, 2017
  • [7] Hydrogenic impurity states in zinc-blende InGaN/GaN asymmetric coupled quantum dots
    Xia, Congxin
    Zeng, Zaiping
    Wei, Shuyi
    SUPERLATTICES AND MICROSTRUCTURES, 2010, 47 (05) : 624 - 630
  • [8] Hydrogenic impurity states in zinc-blende symmetric InGaN/GaN multiple quantum dots
    Wei, Shuyi
    Chang, Qing
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 43 (01): : 354 - 358
  • [9] Binding energy of shallow donor impurity in asymmetric quantum wells
    Zhang, Chaojin
    Wang, Zhanxin
    Liu, Ying
    Guo, Kangxian
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 43 (01): : 372 - 374
  • [10] Cathodoluminescence spectroscopy of zinc-blende GaN quantum dots
    Buerger, M.
    Schupp, T.
    Lischka, K.
    As, D. J.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 5, 2012, 9 (05): : 1273 - 1277