Modeling Process Variability in Scaled CMOS Technology

被引:0
|
作者
Saha, Samar K. [1 ]
机构
[1] Univ Colorado, Colorado Springs, CO 80907 USA
来源
IEEE DESIGN & TEST OF COMPUTERS | 2010年 / 27卷 / 02期
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:8 / 8
页数:1
相关论文
共 50 条
  • [1] Modeling process variability in scaled CMOS technology
    Saha S.K.
    IEEE Design and Test of Computers, 2010, 27 (02): : 8 - 16
  • [2] Introduction: Compact Variability Modeling in Scaled CMOS Design
    Cao, Yu
    Liu, Frank
    IEEE DESIGN & TEST OF COMPUTERS, 2010, 27 (02): : 6 - 7
  • [3] Random variability modeling and its impact on scaled CMOS circuits
    Ye, Yun
    Gummalla, Samatha
    Wang, Chi-Chao
    Chakrabarti, Chaitali
    Cao, Yu
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2010, 9 (3-4) : 108 - 113
  • [4] Random variability modeling and its impact on scaled CMOS circuits
    Yun Ye
    Samatha Gummalla
    Chi-Chao Wang
    Chaitali Chakrabarti
    Yu Cao
    Journal of Computational Electronics, 2010, 9 : 108 - 113
  • [5] Random variability modeling and its impact on scaled CMOS circuits
    School of Electrical, Computer and Energy Engineering , Arizona State University, Tempe, AZ 85287-5706, United States
    J. Comput. Electron., 2009, 3-4 (108-113):
  • [6] SCALED CMOS TECHNOLOGY USING SEG ISOLATION AND BURIED WELL PROCESS
    ENDO, N
    KASAI, N
    ISHITANI, A
    KITAJIMA, H
    KUROGI, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1659 - 1666
  • [7] NiSi salicide technology for scaled CMOS
    Iwai, H
    Ohguro, T
    Ohmi, S
    MICROELECTRONIC ENGINEERING, 2002, 60 (1-2) : 157 - 169
  • [8] SELECTIVE EPITAXIAL TECHNOLOGY FOR SCALED CMOS
    ENDO, N
    KASAI, N
    KITAJIMA, H
    ISHITANI, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C117 - C118
  • [9] SCALED CMOS TECHNOLOGY USING SEG ISOLATION AND BURIED WELL PROCESS.
    Endo, Nobuhiro
    Kasai, Naoki
    Ishitani, Akihiko
    Kitajima, Hiroshi
    Kurogi, Yukinori
    IEEE Transactions on Electron Devices, 1986, ED-33 (11) : 1659 - 1666
  • [10] PVT2: Process, Voltage, Temperature and Time-dependent Variability in Scaled CMOS Process
    Islam, A. K. M. Mahfuzul
    Onodera, Hidetoshi
    2018 IEEE/ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN (ICCAD) DIGEST OF TECHNICAL PAPERS, 2018,