Effect of melt non-stoichiometry on chromium entry into Cr:Mg2SiO4 crystals

被引:0
|
作者
Zharikov, Evgeny, V [1 ]
Subbotin, Kirill A. [1 ,2 ]
Sanina, Victoria V. [1 ,2 ]
Voronov, Valerii V. [1 ]
Lis, Denis A. [1 ]
机构
[1] Russ Acad Sci, Prokhorov Gen Phys Inst, Vavilova Str 38, Moscow 119991, Russia
[2] Mendeleev Univ Chem Technol Russia, Miusskaya Sq 9, Moscow 125049, Russia
基金
俄罗斯科学基金会;
关键词
Czochralski method; Doping; Point defects; Oxides; Phosphors; Solid state lasers; DOPED FORSTERITE; LASER; GROWTH; MG2SIO4; OXYGEN; IONS; OPERATION; TEMPERATURE; SIMULATION; PRESSURE;
D O I
10.1016/j.jcrysgro.2019.125153
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The study of chromium doped forsterite Cr:Mg2SiO4 laser crystals grown from non-stoichiometric melts has been accomplished. Concentration series of the crystals were grown by Czochralski technique from the melts with different MgO/SiO2 molar ratios. The unit cell parameters of the crystals and their hydrostatic densities were measured, and the actual molar weights of the samples were calculated. Both the revealed hydrostatic densities and the actual molar weights appeared to be essentially less than the corresponding values for the stoichiometric Mg2SiO4. Cr4+ content in the crystals, acquired from the optical absorption spectra, linearly increases with increment of MgO excess in the parent melt within whole studied compositions range, whereas the increment of Cr3+ in the same crystals comes to the saturation. This difference in the Cr4+ and Cr3+ behavior opens the potential possibility to optimize the Cr4+/Cr3+ concentrations ratio and to improve in the future lasing properties of the crystals.
引用
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页数:6
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