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- [21] An 11GHz 8-core Series Resonance CMOS VCO with Scalable Ring-coupling Scheme Achieving Phase Noise of-136.8dBc/Hz at 1 MHz Offset 2024 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFIC 2024, 2024, : 95 - 98
- [22] A 10 GHz Delay Line Frequency Discriminator and PD/CP based CMOS Phase Noise Measurement Circuit with-138.6 dBc/Hz Sensitivity at 1 MHz Offset PROCEEDINGS OF THE 2015 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC 2015), 2015, : 63 - 66
- [23] A Fundamental-Frequency 114GHz Circular-Polarized Radiating Element with 14dBm EIRP,-99.3dBc/Hz Phase-Noise at 1MHz Offset and 3.7% Peak Efficiency 2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2017, : 322 - 322
- [24] A Stacked-Complementary 5 GHz Oscillator With Even-Only Differential Harmonic Shaping Achieving-150 dBc/Hz Phase Noise at 10-MHz Offset Using Body-Biased Thin-Oxide 22-nm FDSOI IEEE SOLID-STATE CIRCUITS LETTERS, 2020, 3 : 98 - 101
- [25] A X-band frequency synthesizer with 2-bit control mode is implemented in standard 0.18-μm 1P6M CMOS process. A cascoded topology of voltage control oscillator (VCO) and first stage current mode logic (CML) divider is adopted for current reuse, low power, and robust tracking between VCO and the frequency divider. The measured in-band phase noise of the synthesizer is-75.06 dBc/Hz at a frequency offset of 100 kHz and out-of-band phase noise is-119.8 dBc/Hz at a frequency offset of 10 MHz. The total power consumption is 36.75 mW. The chip size is 0.745 x 0.76mm2. 2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012), 2012, : 1226 - 1228