Trap-Assisted Memristive Switching in HfO2-Based Devices Studied by In Situ Soft and Hard X-Ray Photoelectron Spectroscopy

被引:2
|
作者
Zahari, Finn [1 ]
Marquardt, Richard [1 ]
Kallaene, Matthias [2 ,3 ,4 ]
Gronenberg, Ole [5 ]
Schlueter, Christoph [6 ]
Matveyev, Yury [6 ]
Haberfehlner, Georg [7 ]
Diekmann, Florian [2 ,3 ]
Nierhauve, Alena [2 ,8 ]
Buck, Jens [2 ,8 ]
Hanff, Arndt [2 ,3 ]
Kolhatkar, Gitanjali [9 ]
Kothleitner, Gerald [7 ,10 ]
Kienle, Lorenz [4 ,5 ]
Ziegler, Martin [11 ,12 ]
Carstensen, Juergen [13 ]
Rossnagel, Kai [2 ,3 ,4 ,8 ]
Kohlstedt, Hermann [1 ,4 ]
机构
[1] Univ Kiel, Fac Engn, Nanoelect, D-24143 Kiel, Germany
[2] Univ Kiel, Inst Expt & Appl Phys, D-24098 Kiel, Germany
[3] Univ Kiel, Ruprecht Haensel Lab, D-24098 Kiel, Germany
[4] Univ Kiel, Kiel Nano Surface & Interface Sci KiNSIS, D-24118 Kiel, Germany
[5] Univ Kiel, Fac Engn, Synth & Real Struct, D-24143 Kiel, Germany
[6] Deutsch Elektronen Synchrotron DESY, D-22607 Hamburg, Germany
[7] Graz Univ Technol, Inst Electron Microscopy & Nanoanal, A-8010 Graz, Austria
[8] Ruprecht Haensel Lab, Deutsch Elektronen Synchrotron DESY, D-22607 Hamburg, Germany
[9] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[10] Graz Ctr Electron Microscopy, A-8010 Graz, Austria
[11] Tech Univ Ilmenau, Dept Elect Engn & Informat Technol, D-98693 Ilmenau, Germany
[12] Tech Univ Ilmenau, Inst Micro & Nanotechnol MacroNano, D-98693 Ilmenau, Germany
[13] Univ Kiel, Fac Engn, Funct Nanomat, D-24143 Kiel, Germany
关键词
analog memristive devices; electron traps; hard X-ray photoelectron spectroscopy; HfO2; in situ photoelectron spectroscopy; memristive switching mechanisms; resistive switching; THIN-FILMS; MEMORY; VOLTAGE; TRANSMISSION; TEMPERATURE; PLASMON; NIOBIUM; ENERGY; XPS;
D O I
10.1002/aelm.202201226
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Memristive devices are under intense development as non-volatile memory elements for extending the computing capabilities of traditional silicon technology by enabling novel computing primitives. In this respect, interface-based memristive devices are promising candidates to emulate synaptic functionalities in neuromorphic circuits aiming to replicate the information processing of nervous systems. A device composed of Nb/NbOx/Al2O3/HfO2/Au that shows promising features like analog switching, no electro-forming, and high current-voltage non-linearity is reported. Synchrotron-based X-ray photoelectron spectroscopy and depth-dependent hard X-ray photoelectron spectroscopy are used to probe in situ different resistance states and thus the origin of memristive switching. Spectroscopic evidence for memristive switching based on the charge state of electron traps within HfO2 is found. Electron energy loss spectroscopy and transmission electron microscopy support the analysis. A device model is proposed that considers a two-terminal metal-insulator-semiconductor structure in which traps within the insulator (HfO2/Al2O3) modulate the space charge region within the semiconductor (NbOx) and, thereby, the overall resistance. The experimental findings are in line with impedance spectroscopy data reported in the companion paper (Marquardt et al). Both works complement one another to derive a detailed device model, which helps to engineer device performance and integrate devices into silicon technology.
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页数:17
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