High-Efficiency 28-/39-GHz Hybrid Transceiver Utilizing Si CMOS and GaAs HEMT for 5G NR Millimeter-Wave Mobile Applications

被引：2
|
作者：
Kim, Youngmin [1 ]
Park, Hongjong [1 ]
Yoo, Sangmin [1 ]
机构：
[1] Samsung Elect, Syst LSI, Hwaseong 17113, Gyeonggi, South Korea
来源：
IEEE SOLID-STATE CIRCUITS LETTERS | 2023年 / 6卷
关键词：
CMOS; FR2; III-V; low-noise amplifier; millimeter-wave; NR; phased array; power amplifier; transmitter (TX); receiver (RX) combiner; DESIGN;
D O I：
10.1109/LSSC.2022.3233907
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This letter presents the first demonstration of 5G millimeter-wave hybrid front-ends (FEs) for a phased-array transceiver in order to show efficient transmitter performance with low cost and compact area. The configuration of the proposed hybrid FEs is CMOS-based FEs combined with compact GaAs HEMT-based power-cell array to obtain all the benefits of silicon and III-V technology. The architecture and design method of a millimeter-wave transmitter (TX)/receiver (RX) combiner for antenna-port sharing suitable for the proposed hybrid structure is newly introduced. A developed 29-GHz transceiver FE achieves a linear output power of 14.9 dBm with PAE of 28.5% at SC-FDMA 64QAM 100-MHz EVM of -25 dB in TX mode and noise figure (NF) of 5.5 dB in RX mode. Moreover, a developed 38-GHz transceiver FE achieves a linear output power of 12.8 dBm with PAE of 25.2% at SC-FDMA 64QAM 100-MHz EVM of -25 dB in TX mode and NF of 5.5 dB in RX mode.
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页码：1 / 4
页数：4
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