High electro-mechanical coupling coefficient SAW device with ScAlN on diamond

被引:3
|
作者
Hatashita, K. [1 ]
Tsuchiya, T. [1 ,3 ]
Okazaki, M. [1 ,3 ]
Nakano, M. [1 ]
Anggraini, S. A. [2 ]
Hirata, K. [2 ]
Ohmagari, S. [2 ]
Uehara, M. [2 ]
Yamada, H. [2 ]
Akiyama, M. [2 ]
Shikata, S. [1 ]
机构
[1] Kwansei Gakuin Univ, 1 Uegahara, Sanda, Hyogo 6691336, Japan
[2] AIST, Sensing Syst Res Ctr, 807-1 Syuku, Tosu, Saga 8410052, Japan
[3] Murata Mfg Co Ltd, Kyoto, Japan
关键词
surface acoustic wave; diamond; ScAlN; high frequency; wideband; PROPAGATION LOSS; THIN-FILMS; WIDE-BAND; FILTER; FABRICATION; RESONATORS; SIMULATION; LITAO3;
D O I
10.35848/1347-4065/acb627
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this study, Sc concentration dependence of Sc (x) Al1-x N/AlN/poly-crystalline diamond/Si surface acoustic wave (SAW) characteristics at high Sc from 23.8% to 44.3% was investigated by fabricating one-port SAW resonator at high frequency. 3.8 GHz one-port resonator fabricated on Sc0.43Al0.57N showed an excellent performance of electro-mechanical coupling coefficient (K (2)) as high as 6.34% for 2nd mode Sezawa wave, which enables a wide bandwidth in high frequency applications. The temperature coefficient of frequency was approximately -40 to -50 ppm deg(-1) for the device fabricated with Sc concentration of 42.9%. This is a smaller value compared to conventional high K-2 bulk materials such as LiNbO3. As the result, a high K-2 6.34% material system at a higher Sc concentration of ScAlN/AlN/PCD was found to be possible at a high phase velocity of 7000 m s(-1). Combined with the extremely high-power durability of diamond based device, high-power durable wideband SAW device at high frequency can be expected.
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页数:7
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