Resistive switching in tetragonal tungsten bronze Sr0.6Ba0.4Nb2O6 thin films and control of Schottky barrier by insertion of BiFeO3 layer

Tetragonal tungsten bronze Sr0.6Ba0.4Nb2O6 (SBNO) has exceptional electro-optical, piezoelectric, and thermoelectric properties. Its potential as an electronic device is, furthermore, also relay on the good insulation and multiple-channels structural. However, the transport behavior in SBNO films remains poorly researched. Here, a Pt/SBNO/LSMO capacitor was prepared using the magnetron sputtering method on STO (001) substrates, and its transport behavior was measured. Interestingly, an ultra-high resistive-switching ratio over 10(3) was obtained in SBNO film. The read voltage when the switch ratio is similar to 10(3) drops from 2 V to 0.5 V by inserting a BFO-layer between the interface of SBNO and LSMO. The findings demonstrate that the interface barrier in SBNO/BFO/LSMO devices between the SBNO and BFO layers is essential for maintaining a high switching ratio at low voltage. As a result, the SBNO/BFO/LSMO demonstrates a method for reducing read voltage and offers an approach for future resistive-switching applications.