Effect of Nb Doping on Thermoelectric Properties of TiNiSn Half-Heusler Alloy Prepared by Microwave Method

被引：0

作者：

Zhang, Rui-Peng ^{[1
]}

Bo, Lin ^{[1
]}

Wang, Xing-Long ^{[1
]}

Wang, Wen-Ying ^{[1
]}

Zhu, Jun-Liang ^{[1
]}

Zhao, Ling-Hao ^{[1
,2
]}

Zuo, Min ^{[1
]}

Zhao, De-Gang ^{[1
]}

机构：

[1] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Peoples R China

[2] Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Chinese Acad Sci, Shenzhen 518055, Peoples R China

来源：

PHYSICS OF METALS AND METALLOGRAPHY | 2023年 / 124卷 / 13期

基金：

中国国家自然科学基金;

关键词：

half-Heusler alloy; Ti1-xNbxNiSn; microwave synthesis; rapid hot-pressing; INTERMETALLIC COMPOUNDS; TEMPERATURE; COMPOSITES; TRANSPORT; ZRNISN;

D O I：

10.1134/S0031918X22601925

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

The inherent high thermal conductivity of TiNiSn half-Heusler (HH) alloy, as well as the long preparation cycle time and high cost of conventional preparation methods limited its commercial application. Herein, Ti1 - xNbxNiSn half-Heusler alloys with low lattice thermal conductivity were successfully prepared by microwave synthesis combined with rapid hot-pressing sintering, which significantly shortened the preparation cycle and ensured high density of TiNiSn half-Heusler alloys. The effects of Nb substitution at Ti sites on the composition distribution, thermal and electrical transport properties of Ti1 - xNbxNiSn half-Heusler samples were studied. The maximum ZT value of Ti0.9Nb0.1NiSn sample was 0.39 at 725 K due to the increase of power factor (PF) and the decrease of lattice thermal conductivity caused by the enhanced phonon scattering, which was about 204% higher than that of undoped TiNiSn.

引用

页码：1341 / 1350

页数：10

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