Effect of Nb Doping on Thermoelectric Properties of TiNiSn Half-Heusler Alloy Prepared by Microwave Method

被引：0
|
作者：
Zhang, Rui-Peng [1 ]
Bo, Lin [1 ]
Wang, Xing-Long [1 ]
Wang, Wen-Ying [1 ]
Zhu, Jun-Liang [1 ]
Zhao, Ling-Hao [1 ,2 ]
Zuo, Min [1 ]
Zhao, De-Gang [1 ]
机构：
[1] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Peoples R China
[2] Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Chinese Acad Sci, Shenzhen 518055, Peoples R China
来源：
PHYSICS OF METALS AND METALLOGRAPHY | 2023年 / 124卷 / 13期
基金：
中国国家自然科学基金;
关键词：
half-Heusler alloy; Ti1-xNbxNiSn; microwave synthesis; rapid hot-pressing; INTERMETALLIC COMPOUNDS; TEMPERATURE; COMPOSITES; TRANSPORT; ZRNISN;
D O I：
10.1134/S0031918X22601925
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
The inherent high thermal conductivity of TiNiSn half-Heusler (HH) alloy, as well as the long preparation cycle time and high cost of conventional preparation methods limited its commercial application. Herein, Ti1 - xNbxNiSn half-Heusler alloys with low lattice thermal conductivity were successfully prepared by microwave synthesis combined with rapid hot-pressing sintering, which significantly shortened the preparation cycle and ensured high density of TiNiSn half-Heusler alloys. The effects of Nb substitution at Ti sites on the composition distribution, thermal and electrical transport properties of Ti1 - xNbxNiSn half-Heusler samples were studied. The maximum ZT value of Ti0.9Nb0.1NiSn sample was 0.39 at 725 K due to the increase of power factor (PF) and the decrease of lattice thermal conductivity caused by the enhanced phonon scattering, which was about 204% higher than that of undoped TiNiSn.
引用
收藏
页码：1341 / 1350
页数：10
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