Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers

被引：6

作者：

Zhou, Bowei ^{[1
]}

Khanal, Pravin ^{[1
]}

Benally, Onri Jay ^{[2
]}

Lyu, Deyuan ^{[2
]}

Gopman, Daniel B. ^{[3
]}

Enriquez, Arthur ^{[1
]}

Habiboglu, Ali ^{[1
]}

Warrilow, Kennedy ^{[1
]}

Wang, Jian-Ping ^{[2
]}

Wang, Wei-Gang ^{[1
]}

机构：

[1] Univ Arizona, Dept Phys, Tucson, AZ 85721 USA

[2] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

[3] Natl Inst Stand & Technol, Mat Sci & Engn Div, Gaithersburg, MD 20899 USA

来源：

SCIENTIFIC REPORTS | 2023年 / 13卷 / 01期

关键词：

ROOM-TEMPERATURE;

D O I：

10.1038/s41598-023-29752-0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver unique functionality. Here we report the study of magnetic tunnel junctions with Nb as the heavy metal layers. An interfacial perpendicular magnetic anisotropy energy density of 1.85 mJ/m(2) was obtained in Nb/CoFeB/MgO heterostructures. The tunneling magnetoresistance was evaluated in junctions with different thickness combinations and different annealing conditions. An optimized magnetoresistance of 120% was obtained at room temperature, with a damping parameter of 0.011 determined by ferromagnetic resonance. In addition, spin-transfer torque switching has also been successfully observed in these junctions with a quasistatic switching current density of 7.3 x 10(5) A/cm(2).

引用

页数：7

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