High-Frequency Characterization and Modeling of Low and High Voltage FinFETs for RF SoCs

被引:1
|
作者
Chauhan, Yogesh S. [1 ]
Kar, Anirban [1 ]
Parihar, Shivendra S. [1 ]
Huang, Jun Z. [2 ]
Zhang, Huilong [2 ]
Wang, Weike [2 ]
Imura, Kimihiko [2 ]
机构
[1] Indian Inst Technol Kanpur, Kanpur 208016, Uttar Pradesh, India
[2] MaxLinear Inc, Carlsbad, CA 92008 USA
关键词
I/O FinFETs; Drain-Extended FinFETs; Analog and RF Characterization; Compact Modeling;
D O I
10.1109/EDTM55494.2023.10103010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Modern SoCs require low-voltage core transistors with excellent digital, analog and RF properties, thick oxide transistors for I/O buffers, and high voltage devices for effective power management. In this work, we present a complete DC to RF characterization, compact modeling strategy, and model extraction of commercially fabricated low and high-voltage FinFETs. The industry-standard BSIM-CMG compact model is modified to capture both low and high frequency characteristics accurately. Furthermore, we thoroughly compare the DC, analog, and RF performance of low-voltage, I/O, and LDMOS transistors from different CMOS technologies.
引用
收藏
页数:3
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