Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

被引:6
|
作者
Li, Guo [1 ]
Xu, Mingsheng [1 ]
Zou, Dongyang [1 ]
Cui, Yingxin [1 ]
Zhong, Yu [1 ]
Cui, Peng [1 ]
Cheong, Kuan Yew [2 ]
Xia, Jinbao [1 ]
Nie, Hongkun [1 ]
Li, Shuqiang [1 ]
Linewih, Handoko [1 ]
Zhang, Baitao [1 ]
Xu, Xiangang [1 ]
Han, Jisheng [1 ]
机构
[1] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China
[2] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Elect Mat Res Grp, Seberang Perai 14300, Pulau Pinang, Malaysia
基金
中国国家自然科学基金;
关键词
silicon carbide power device; laser annealed; ohmic contact; NICKEL;
D O I
10.3390/cryst13071106
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Improved ohmic contact on n-type 4H-SiC
    Gao, Y
    Tang, Y
    Hoshi, M
    Chow, TP
    SOLID-STATE ELECTRONICS, 2000, 44 (10) : 1875 - 1878
  • [2] Formation of tungsten ohmic contact on n-type 6H-SiC by pulsed laser processes
    Nakashima, K
    Eryu, O
    Kume, T
    Nakata, T
    Inoue, M
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 779 - 782
  • [3] LASER ANNEALED OHMIC CONTACT TO N+-GAAS
    SIRCAR, P
    CANADIAN JOURNAL OF PHYSICS, 1983, 61 (08) : 1218 - 1221
  • [4] Improved Ni ohmic contact on n-type 4H-SiC
    C. Hallin
    R. Yakimova
    B. Pécz
    A. Georgieva
    Ts. Marinova
    L. Kasamakova
    R. Kakanakov
    E. Janzén
    Journal of Electronic Materials, 1997, 26 : 119 - 122
  • [5] Improved Ni ohmic contact on n-type 4H-SiC
    Hallin, C
    Yakimova, R
    Pecz, B
    Georgieva, A
    Marinova, T
    Kasamakova, L
    Kakanakov, R
    Janzen, E
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 119 - 122
  • [6] Si ohmic contacts on N-type SiC
    Cichon, Stanislav
    Machac, Petr
    Barda, Bohumil
    Kudrnova, Marie
    2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM), 2011,
  • [7] Ti Ohmic contact without post-annealing process to n-type 6H-SiC
    Teraji, T
    Hara, S
    Okushi, H
    Kajimura, K
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 593 - 596
  • [8] Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing
    Chang Shao-Hui
    Liu Xue-Chao
    Huang Wei
    Xiong Ze
    Yang Jian-Hua
    Shi Er-Wei
    CHINESE PHYSICS B, 2012, 21 (09)
  • [9] Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing
    常少辉
    刘学超
    黄维
    熊泽
    杨建华
    施尔畏
    Chinese Physics B, 2012, 21 (09) : 410 - 413
  • [10] Ohmic contact formation on n-type Ge
    Lieten, R. R.
    Degroote, S.
    Kuijk, M.
    Borghs, G.
    APPLIED PHYSICS LETTERS, 2008, 92 (02)