Self-Rectifying All-Optical Modulated Optoelectronic Multistates Memristor Crossbar Array for Neuromorphic Computing

被引:26
|
作者
Lu, Chen [1 ,2 ]
Meng, Jialin [1 ,2 ]
Song, Jieru [1 ,2 ]
Wang, Tianyu [1 ,2 ]
Zhu, Hao [1 ,2 ]
Sun, Qing-Qing [1 ,2 ]
Zhang, David Wei [1 ,2 ]
Chen, Lin [1 ,2 ]
机构
[1] Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China
[2] Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China
基金
中国博士后科学基金;
关键词
self-rectify; all-optical; memristor; crossbar; neuromorphic computing;
D O I
10.1021/acs.nanolett.3c04358
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Researching optoelectronic memristors capable of integrating sensory and processing functions is essential for advancing the development of efficient neuromorphic vision. Here, we experimentally demonstrated an all-optical controlled and self-rectifying optoelectronic memristor (OEM) crossbar array with the function of multilevel storage under light stimuli. The NiO/TiO2 device exhibits an ultrahigh (>10(4)) rectifying ratio (RR) thus overcoming the presence of sneak current. The reversible conductance modulation without electric signal involvement provides a novel way to realize ultrafast information processing. The proposed OEM array realized synaptic functions observed in the human brain, including long-term potentiation (LTP), long-term depression (LTD), paired-pulse facilitation (PPF), the transition from short-term memory (STM) to long-term memory (LTM), and learning experience behaviors successfully. The authors present a novel OEM crossbar that possesses complete light-modulation capabilities, potentially advancing the future development of efficient neuromorphic vision.
引用
收藏
页码:1667 / 1672
页数:6
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