Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage

被引:54
|
作者
Pal, Arnab [1 ]
Zhang, Shuo [1 ,2 ]
Chavan, Tanmay [1 ]
Agashiwala, Kunjesh [1 ]
Yeh, Chao-Hui [1 ]
Cao, Wei [1 ]
Banerjee, Kaustav [1 ]
机构
[1] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA
[2] Zhejiang Univ, Coll ISEE, Hangzhou 310027, Peoples R China
基金
美国国家科学基金会;
关键词
2D materials; quantum computing; quantum tunneling devices; spintronics; valleytronics; HEXAGONAL BORON-NITRIDE; TRANSITION-METAL DICHALCOGENIDES; FIELD-EFFECT TRANSISTOR; SINGLE-ELECTRON SPIN; HIGH-QUALITY; GRAPHENE-NANORIBBONS; KEY DISTRIBUTION; MONOLAYER MOS2; DIRAC FERMIONS; ORBIT TORQUES;
D O I
10.1002/adma.202109894
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy-efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band-to-band tunneling, spin-orbit coupling, spin-valley locking, and quantum entanglement. The emerging 2D layered materials, featured by their exotic electrical, magnetic, optical, and structural properties, provide a revolutionary low-dimensional and manufacture-friendly platform (and many more opportunities) to implement these quantum-engineered devices, compared to the traditional electronic materials system. Here, the progress in quantum-engineered devices is reviewed and the opportunities/challenges of exploiting 2D materials are analyzed to highlight their unique quantum properties that enable novel energy-efficient devices, and useful insights to quantum device engineers and 2D-material scientists are provided.
引用
收藏
页数:32
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