Electrically Controlled Quantum Transition to an Anomalous Metal in 2D

被引:0
|
作者
Halder, Soumyadip [1 ]
Garg, Mona [1 ]
Gawande, Shreekant [1 ]
Mehta, Nikhlesh Singh [1 ]
Kumari, Anamika [2 ]
Chakraverty, Suvankar [2 ]
Kumar, Sanjeev [1 ]
Sheet, Goutam [1 ,3 ]
机构
[1] Indian Inst Sci Educ & Res IISER Mohali, Dept Phys Sci, Manauli 140306, India
[2] Inst Nano Sci & Technol, Quantum Mat & Devices Unit, Mohali 140306, Punjab, India
[3] Argonne Natl Lab, Mat Sci Div, Lemont, IL 60439 USA
关键词
oxide; 2DEGs; LaVO3/SrTiO3; interfaces; superconductivity; anomalous metal; ferroelectricity; network-resistor model; SUPERCONDUCTIVITY;
D O I
10.1021/acsaelm.3c00624
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The mechanism through which superconductivity is destroyed upon controlled disordering often holds the key to understanding the mechanism of the emergence of superconductivity. Here, we demonstrate an in-situ mechanism to control the fraction of disorder in a 2D superconductor. By controlling an electric field V (G), we created an assembly of segregated superconducting nano-islands and varied the interisland distance to accomplish a quantum phase transition from a superconducting phase to a strange quantum anomalous metallic (QAM) phase at LaVO3/SrTiO3 interfaces. In the QAM phase, the resistivity dropped below a critical temperature (T (CM)) as if the system was approaching superconductivity and then saturated, indicating the destruction of global phase coherence and the emergence of a phase where metal-like transport of Bosons (a Bose metal) becomes a possibility. The unprecedented control over the island size is obtained through the control of nanometer-scale ferroelectric domains formed in the SrTiO3 side of the interface due to a low-temperature structural phase transition.
引用
收藏
页码:5446 / 5452
页数:7
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