Polyethylene interfacial dielectric layer for organic semiconductor single crystal based field-effect transistors

被引:1
|
作者
Chen, Min [1 ]
Peng, Boyu [1 ]
Guo, Xuyun [2 ]
Zhu, Ye [2 ]
Li, Hanying [1 ]
机构
[1] Zhejiang Univ, Shanxi Zheda Inst Adv Mat & Chem Engn, Int Res Ctr Polymers 10, Dept Polymer Sci & Engn,MOE Key Lab Macromol Synth, Hangzhou 310027, Shanxi, Peoples R China
[2] Hong Kong Polytech Univ, Res Inst Smart Energy, Dept Appl Phys, Hong Kong 999077, Peoples R China
基金
中国国家自然科学基金;
关键词
Polyethylene; Interfacial dielectric layer; Organic semiconductor; Single crystal; Organic field-effect transistors; SELF-ASSEMBLED MONOLAYERS; PHOSPHONIC-ACIDS; THIN; CRYSTALLIZATION; PRINCIPLES; ELECTRON; MOBILITY; SURFACE; FILMS;
D O I
10.1016/j.cclet.2023.109051
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic semiconductor single crystals (OSSCs) have shown their promising potential in high-performance organic field-effect transistors (OFETs). The interfacial dielectric layers are critical in these OFETs as they not only govern the key semiconductor/dielectric interface quality but also determine the growth of OSSCs by their wetting properties. However, reported interfacial dielectric layers either need rigorous preparation processes, rely on certain surface chemistry reactions, or exhibit poor solvent resistance, which limits their applications in low-cost, large-area, monolithic fabrication of OSSC-based OFETs. In this work, polyethylene (PE) thin films and lamellar single crystals are utilized as the interfacial dielectric layers, providing solvent resistive but wettable surfaces that facilitate the crystallization of 6,13-bis(tri-isopropylsilylethynyl)pentacene (TIPS-PEN) and 6,13-bis(triisopropylsilylethynyl)-5,7,12,14tetraazapentacene (TIPS-TAP). As evidenced by the presence of ambipolar behavior in TIPS-PEN single crystals and the high electron mobility (2.3 +/- 0.34 cm2 V-1 s-1 ) in TIPS-TAP single crystals, a general improvement on electron transport with PE interfacial dielectric layers is revealed, which likely associates with the chemically inertness of the saturated C-H bonds. With the advantages in both processing and device operation, the PE interfacial dielectric layer potentially offers a monolithic way for the enhancement of electron transport in solution-processed OSSC-based OFETs. (c) 2024 Published by Elsevier B.V. on behalf of Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences.
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页数:5
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