The impact of local pinning sites in magnetic tunnel junctions with non-homogeneous free layers

被引:2
|
作者
Jenkins, Alex. S. [1 ]
Martins, Leandro [1 ]
Benetti, Luana C. [1 ]
Schulman, Alejandro [1 ]
Anacleto, Pedro [1 ]
Claro, Marcel S. [1 ]
Caha, Ihsan [1 ]
Deepak, Francis Leonard [1 ]
Paz, Elvira [1 ]
Ferreira, Ricardo [1 ]
机构
[1] Int Iberian Nanotechnol Lab INL, Ave Mestre Jose Veiga S-N, P-4715330 Braga, Portugal
基金
欧盟地平线“2020”;
关键词
MOTION;
D O I
10.1038/s43246-023-00423-x
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pinning at local defects is a significant road block for the successful implementation of technological paradigms which rely on the dynamic properties of non-trivial magnetic textures. Here, a comprehensive study of the influence of local pinning sites for non-homogeneous magnetic layers integrated as the free layer of a magnetic tunnel junction is presented, both experimentally and with corresponding micromagnetic simulations. The pinning sites are found to be extremely detrimental to the frequency controllability of the devices, a key requirement for their use as synapses in a frequency multiplexed artificial neural networks. In addition to describing the impact of the local pinning sites in the more conventional NiFe, a vortex-based magnetic tunnel junction with an amorphous free layer is presented which shows significantly improved frequency selectivity, marking a clear direction for the design of future low power devices. Pinning sites are extremely detrimental to the frequency tunability of nano-rectifiers based on magnetic tunnel junctions. Here, the effect of pinning defects in vortex-based magnetic tunnel junctions is thoroughly explored, revealing that an amorphous magnetic material utilized as free layer can significantly reduce the impact of pinning.
引用
收藏
页数:8
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